BUK7540-100A NXP Semiconductors, BUK7540-100A Datasheet - Page 6

• Manufacturer Part Number: BUK7540-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7540-100A
Product data sheet
Fig 7.
Fig 9.
Fig 11. Forward transconductance as a function of
R
(mΩ)
DS(on)
(A)
g
(S)
I
D
fs
50
40
30
20
10
38
34
30
26
80
60
40
20
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
drain current; typical values
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
T
0
1
0
j
j
j
= 25 °C
= 25 °C; I
= 25 °C; V
0.4
10
2
V
D
GS
DS
= 25 A
(V) = 10
0.8
> I
D
20
x R
3
DSon
1.2
30
4
1.6
All information provided in this document is subject to legal disclaimers.
V
4.6
I
003aaf475
003aaf477
003aaf479
V
GS
D
8
DS
(A)
(V)
5.4
5.2
4.8
4.4
(V)
6
5
40
2
5
Rev. 2 — 20 April 2011
Fig 8.
Fig 10. Transfer characteristics: drain current as a
Fig 12. Normalized drain-source on-state resistance
R
DS(on)
(Ω)
(A)
I
a
0.08
0.06
0.04
0.02
D
0.1
2.5
1.5
0.5
40
30
20
10
0
0
3
2
1
−100
of drain current; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Drain-source on-state resistance as a function
V
0
0
j
DS
N-channel TrenchMOS standard level FET
= 25 °C
4.8
> I
5
D
10
x R
2
DSon
5.2
0
20
BUK7540-100A
5.4
T
j
= 25 °C
4
30
100
V
GS
6
T
T
© NXP B.V. 2011. All rights reserved.
40
mb
(V) = 10
j
6
V
= 175 °C
003aaf476
003aaf478
003aaf480
GS
8
(°C)
I
D
(V)
(A)
200
50
8
6 of 12