BUK7610-100B NXP Semiconductors, BUK7610-100B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7610-100B

Manufacturer Part Number
BUK7610-100B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7610-100B.pdf (14 pages)

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
I
D
DS
tot
DS(AL)S
DSon
GD
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
Automotive systems
BUK7610-100B
N-channel TrenchMOS standard level FET
Rev. 03 — 12 April 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Conditions
T
V
see
T
V
T
see
I
R
T
V
see
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 75 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 80 V; T
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 175 °C
mb
j
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 100 V;
Figure
= 25 °C;
= 10 V;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
8.6
-
22
Max Unit
100
75
300
10
629
-
V
A
W
mΩ
mJ
nC

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BUK7610-100B Summary of contents

Page 1

... BUK7610-100B N-channel TrenchMOS standard level FET Rev. 03 — 12 April 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...

Page 3

... ° ≤ 100 Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Min Typ Max - - 100 - - 100 - [ 110 [ ...

Page 4

... T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 02ng68 μ ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7610-100B Product data sheet Conditions see Figure 4 mounted on printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET Min Typ - - - 50 03ng69 δ ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B Min Typ Max Unit 100 - - ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 11 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 g fs ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03ng77 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 120 −60 junction temperature 2 ...

Page 9

... 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03ng71 ° ...

Page 10

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...

Page 11

... Release date BUK7610-100B_3 20100412 • Modifications: BUK7610-100B_3 has been separated from datasheet BUK75/7610-100B_2 • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 12 April 2010 BUK7610-100B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 April 2010 Document identifier: BUK7610-100B ...

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