BUK7E4R3-75C NXP Semiconductors, BUK7E4R3-75C Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7E4R3-75C

Manufacturer Part Number
BUK7E4R3-75C
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
[1]
[2]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
BUK7E4R3-75C
N-channel TrenchMOS standard level FET
Rev. 02 — 19 April 2011
AEC Q101 compliant
Suitable for standard level gate drive
sources
12 V, 24 V and 42 V loads
Automotive systems
Conditions
T
V
see
T
V
see
I
V
D
j
mb
GS
GS
GS
≥ 25 °C; T
= 100 A; V
Figure 4
Figure
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; T
7; see
j
D
sup
≤ 175 °C
mb
j(init)
= 25 A; T
≤ 75 V; R
= 25 °C; see
Figure 2
= 25 °C; unclamped
Figure 8
j
= 25 °C;
GS
= 50 Ω;
Figure
1;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1][2]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
3.7
-
Max
75
100
333
4.3
630
Unit
V
A
W
mΩ
mJ

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BUK7E4R3-75C Summary of contents

Page 1

... BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C Graphic symbol mbb076 Version SOT226 © NXP B.V. 2011. All rights reserved ...

Page 3

... T pulsed ° ≤ 100 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C Min Max - -20 20 [1][2] Figure 1; - 100 [1][2] Figure 1; - 100 [3][2] ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab385 (ms) AL © NXP B.V. 2011. All rights reserved. ...

Page 5

... BUK7E4R3-75C Product data sheet Limit DSon DS D (1) 1 Conditions vertical in free air All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET 100 μ 100 (V) DS Min Typ - - ...

Page 6

... ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C Min Typ Max 4 0.02 1 ...

Page 7

... V (V) GS Fig 6. 003aab378 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − Gate-source threshold voltage as a function of junction temperature 2 ...

Page 8

... ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET C iss C oss C rss function of drain-source voltage; typical values 003aab384 1 ...

Page 9

... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7E4R3-75C separated from data sheet BUK75_7E4R3-75C v.1. BUK75_7E4R3-75C v.1 20060810 BUK7E4R3-75C Product data sheet N-channel TrenchMOS standard level FET ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 BUK7E4R3-75C N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: BUK7E4R3-75C ...

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