BUK95180-100A NXP Semiconductors, BUK95180-100A Datasheet
BUK95180-100A
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BUK95180-100A Summary of contents
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... BUK95180-100A N-channel TrenchMOS logic level FET Rev. 02 — 26 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C mb ≤ 5 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 3 Version SOT78A Min Max - 100 - 100 ...
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... −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET 100 150 Normalized continuous drain current as a function of mounting base temperature ...
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... P − −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET Min Typ - - - 60 003aaf334 t p δ −2 − (s) p Max Unit 2 ...
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... ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET Min Typ Max = 25 °C 100 - - j = -55 ° 2 ...
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... V (V) DS Fig 8. 003aaf337 (V) GS Fig 10. Transfer characteristics: drain current as a All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET 240 3 200 160 120 °C j Drain-source on-state resistance as a function of drain current ...
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... 100 200 T (°C) j Fig 14. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET 3 2.5 2 1.5 1 0.5 −100 0 100 factor as a function of junction temperature − ...
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... DS Fig 16. Gate-source voltage as a function of gate ( 150 ° 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET ° charge; typical values 003aaf345 = 25 ° ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK95180-100A separated from data sheet BUK95180_96180-100A v.1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 26 April 2011 BUK95180-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK95180-100A ...