BUK9524-55A NXP Semiconductors, BUK9524-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9524-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9524-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
180
160
140
120
100
(A)
10
I
10
10
10
10
10
D
80
60
40
20
0
−1
−2
−3
−4
−5
−6
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
V
GS
(V) = 9
0.5
2
1
min
4
1.5
8
typ
6
2
max
All information provided in this document is subject to legal disclaimers.
8
V
2.5
GS
V
DS
03na05
03na18
(V)
(V)
10
2.2
7
6
5
3
4
Rev. 02 — 27 January 2011
10
3
Fig 6.
Fig 8.
(pF)
R
(mΩ)
C
DSon
4000
3500
3000
2500
2000
1500
1000
500
45
40
35
30
25
20
15
10
0
10
of gate-source voltage; typical values
as a function of drain-source voltage; typical
values
Drain-source on-state resistance as a function
Input, output and reverse transfer capacitances
2
−2
N-channel TrenchMOS logic level FET
10
4
−1
BUK9524-55A
1
6
C
C
C
oss
rss
iss
10
8
© NXP B.V. 2011. All rights reserved.
V
V
DS
GS
03na09
03na03
(V)
(V)
10
10
2
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