BUK9605-30A NXP Semiconductors, BUK9605-30A Datasheet - Page 5

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9605-30A

Manufacturer Part Number
BUK9605-30A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9605-30A
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BUK9605-30A
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
6. Characteristics
Table 6.
BUK9605-30A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
V
T
V
T
V
T
V
R
measured from upper edge of drain tab
to centre of die ; T
from source lead soldering point to
source bond pad ; T
I
I
I
V
D
D
D
D
D
S
S
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C
= nk °C
= 25 °C
= 25 A; V
= 75 A; V
= 75 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Rev. 03 — 19 April 2011
= 30 V; V
= 30 V; V
= 10 V; V
= -10 V; V
= 5 V; I
= 10 V; I
= 4.5 V; I
= 5 V; I
= 0 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= -10 V; V
= 10 Ω; T
D
D
GS
GS
S
DS
DS
DS
DS
DS
DS
D
/dt = -100 A/µs;
= 25 A; T
= 25 A; T
D
GS
GS
DS
L
DS
DS
= 25 A; T
= 0 V; T
= 0 V; T
= V
= V
= V
= 25 A; T
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
= 25 V; f = 1 MHz;
= 25 V; f = 1 MHz;
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 30 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
j
= 25 °C
; T
; T
; T
j
j
j
j
= 25 °C
= 25 °C
= 25 °C
= 175 °C
j
j
j
j
j
j
j
j
= 25 °C
= 175 °C
= -55 °C
= 25 °C
j
GS
= 25 °C
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
j
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9605-30A
Min
30
27
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
0.05
-
2
2
4.3
3.9
-
-
6500
1500
1000
45
220
435
320
2.5
7.5
0.85
1.1
400
1
© NXP B.V. 2011. All rights reserved.
330
Max
-
-
2
-
2.3
10
500
100
100
5
4.6
5.4
9.3
8600
1800
1350
65
600
450
-
-
1.2
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
V
ns
µC
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