BUK9607-30B NXP Semiconductors, BUK9607-30B Datasheet
BUK9607-30B
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BUK9607-30B Summary of contents
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... BUK9607-30B N-channel TrenchMOS logic level FET Rev. 02 — 31 January 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET Min ≤ sup = 50 Ω °C; unclamped = 5 V ...
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... Ω sup °C; unclamped j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET Min Max - -15 15 [1] Figure 1; - 108 [1] Figure 1 ...
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... Limit DSon DS D Capped due to package DC 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature 03nn19 = 10 μ s ...
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... BUK9607-30B Product data sheet Conditions see Figure 4 minimum footprint ; mounted on a printed-circuit board −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET Min Typ - - - 50 03nn20 t p δ ...
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... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 1.1 1.5 2 0.5 ...
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... DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET 20 R DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... Fig 10. Gate-source threshold voltage as a function of 03nn17 Label 120 160 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET 2.5 2.0 max 1.5 typ min 1.0 0.5 0 − 120 junction temperature ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nn11 = 25 ° ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9607-30B separated from data sheet BUK95_9607_30B v.1. BUK95_9607_30B v.1 20030425 BUK9607-30B Product data sheet ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 31 January 2011 BUK9607-30B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 31 January 2011 Document identifier: BUK9607-30B ...