PHB20N06T NXP Semiconductors, PHB20N06T Datasheet - Page 3

• Manufacturer Part Number: PHB20N06T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB20N06T_2
Product data sheet
Fig 1.
Fig 3.
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
10
−1
3
2
1
1
P
100
t
p
T
R
DSon
δ =
150
T
t
= V
t
p
T
DS
mb
/ I
03aa24
(°C)
D
Rev. 02 — 25 November 2009
200
10
Fig 2.
D.C.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
50
VDS
t
10 ms
p
100 μs
1 ms
003aaa043
(V)
= 10 μs
100
PHB20N06T
10
2
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
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