PHB20N06T NXP Semiconductors, PHB20N06T Datasheet - Page 4

• Manufacturer Part Number: PHB20N06T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB20N06T_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
single pulse
10
Conditions
see
mounted on a printed-circuit board;
minimum footprint
−5
Figure 4
Rev. 02 — 25 November 2009
10
−4
10
−3
10
−2
N-channel TrenchMOS standard level FET
P
10
t
p
−1
T
Min
-
-
t
003aaa044
p
δ =
(s)
t
T
t
PHB20N06T
p
1
Typ
-
50
© NXP B.V. 2009. All rights reserved.
Max
2.4
-
Unit
K/W
K/W
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