PHB20NQ20T NXP Semiconductors, PHB20NQ20T Datasheet
PHB20NQ20T
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PHB20NQ20T Summary of contents
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... PHB20NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 16 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... V; unclamped sup = 50 Ω ≤ sup Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T Graphic symbol mbb076 3 Version SOT404 Min Max - 200 = 20 kΩ - 200 ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET 100 150 Normalized continuous drain current as a function of mounting base temperature 2 10 prior to avalanche = 150 ° ...
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... P 0.05 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET Min Typ - - - 50 003aaf099 t p δ −2 − (s) ...
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... ° /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T Min Typ Max = -55 °C 178 - - °C 200 - - ° ...
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... (V) GS Fig 9. 003aaf104 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET 0.3 4.6 V 4.8 V DS(on) 4 (Ω) 0.2 5 ° ...
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... Fig 13. Input, output and reverse transfer capacitances 003aaf108 = 160 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET (pF − ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB20NQ20T separated from data sheet PHB_PHP20NQ20T v.1. PHB_PHP20NQ20T v.1 19990801 PHB20NQ20T Product data sheet ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 December 2010 PHB20NQ20T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 December 2010 Document identifier: PHB20NQ20T ...