PHB20NQ20T NXP Semiconductors, PHB20NQ20T Datasheet - Page 2

• Manufacturer Part Number: PHB20NQ20T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHB20NQ20T
Product data sheet
Pin
1
2
3
mb
Type number
PHB20NQ20T
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
stg
j
DS
DGR
GS
tot
DS(AL)S
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive avalanche current
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
[1]
Description
plastic gle-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 16 December 2010
Conditions
T
T
V
V
pulsed; T
T
T
pulsed; T
V
V
R
V
R
j
j
mb
mb
GS
GS
GS
sup
sup
GS
GS
≥ 25 °C; T
≥ 25 °C; T
Simplified outline
= 25 °C
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω
= 50 Ω; unclamped
≤ 25 V; unclamped; t
≤ 25 V; V
mb
mb
SOT404 (D2PAK)
= 25 °C
= 25 °C
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
1
= 100 °C
= 25 °C
= 10 V; T
mb
= 25 °C; I
2
N-channel TrenchMOS standard level FET
3
GS
p
j(init)
= 100 µs;
D
= 20 kΩ
= 19 A;
= 25 °C;
Graphic symbol
PHB20NQ20T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
175
175
Version
SOT404
Max
200
200
20
14
20
80
150
20
80
252
20
D
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
A
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