PHB45NQ10T NXP Semiconductors, PHB45NQ10T Datasheet
PHB45NQ10T
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PHB45NQ10T Summary of contents
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... PHB45NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 8 July 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...
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... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET Min - = 20 kΩ - -55 - ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET prior to avalanche = 150 ° −3 −2 − Single-shot avalanche rating; avalanche ...
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... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T Min Typ Max 100 - - - - 500 - 0.05 ...
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... (V) GS Fig 9. 014aab210 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET 0.16 4 4.2 4.4 4.6 DS(on) (Ω) 4.8 0.12 0.08 0. °C j Drain-source on-state resistance as a function of drain current ...
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... Fig 13. Input, output and reverse transfer capacitances 014aab214 (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET (pF −1 10 ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB45NQ10T separated from data sheet PHB_PHP_PHW45NQ10T v.1. Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 8 July 2010 PHB45NQ10T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 8 July 2010 Document identifier: PHB45NQ10T ...