PHP30NQ15T NXP Semiconductors, PHP30NQ15T Datasheet
PHP30NQ15T
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PHP30NQ15T Summary of contents
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... PHP30NQ15T N-channel TrenchMOS standard level FET Rev. 03 — 3 March 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Product data sheet Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET Graphic symbol mb G mbb076 © NXP B.V. 2010. All rights reserved. ...
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... R Figure 4 GS 03aa24 ( −1 10 150 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET Min - - -20 and Figure -55 - ≤ sup Figure 4 ...
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... Fig 4. Conditions see Figure 5 vertical in still air Single Pulse −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET prior to avalanche = 150 ° −1 −3 −2 −1 10 ...
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... ° see Figure /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET Min Typ 150 - 0. 0. ...
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... DS Fig 7. 003aaa023 I D (A) max typ min 100 140 180 T (°C) j Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET ( 175 ° ° ...
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... I (A) D Fig 11. Drain-source on-state resistance as a function 003aaa064 V (V) 80 120 160 T (°C) j Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET 0.20 4.4 V 5.0 V 4.6 V 0.16 5.2 V 4.8 V 0.12 5.4 V 0.06 0. ...
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... I S (A) C iss C oss C rss (V) DS Fig 15. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET 175 ° 0.2 0.4 0.6 0.8 voltage; typical values 003aaa067 = 25 ° ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Typenumber PHP30NQ15T separated from data sheet PHB_PHP30NQ15T-02. PHB_PHP30NQ15T-02 20010312 (9397 750 08037) PHB_PHP30NQ15T_1 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 PHP30NQ15T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 March 2010 Document identifier: PHP30NQ15T_3 ...