PHP30NQ15T NXP Semiconductors, PHP30NQ15T Datasheet - Page 3

• Manufacturer Part Number: PHP30NQ15T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PHP30NQ15T_3
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
non-repetitive
avalanche current
50
100
Conditions
T
T
V
V
t
T
t
V
unclamped; R
V
R
T
p
p
j
j
mb
mb
GS
GS
GS
sup
150
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
All information provided in this document is subject to legal disclaimers.
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 50 Ω; unclamped; see
T
≤ 25 V; V
mb
03aa24
(°C)
200
j
j
Rev. 03 — 3 March 2010
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
GS
= 25 °C; see
= 100 °C; see
= 50 Ω; t
= 10 V; T
Figure 3
= 25 °C; I
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
p
j(init)
= 0.2 ms; see
D
= 20 kΩ
Figure 4
(A)
= 26 A; V
I
Figure 1
D
= 25 °C;
10
Figure 1
10
10
10
−1
3
2
1
currents as a function of drain-source voltage
Safe operating area; continuous and peak drain
1
Figure 2
N-channel TrenchMOS standard level FET
R
DSon
sup
and
Figure 4
≤ 25 V;
= V
2
DS
/ I
10
D
D.C.
PHP30NQ15T
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
10
2
100 ms
10 ms
100 μs
1 ms
V
© NXP B.V. 2010. All rights reserved.
t
p
DS
= 10 μs
003aaa055
(V)
Max
150
150
20
29
20
116
150
175
175
29
116
502
29
10
3
V
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
A
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