PHP30NQ15T NXP Semiconductors, PHP30NQ15T Datasheet - Page 4

• Manufacturer Part Number: PHP30NQ15T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP30NQ15T_3
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
Transient thermal impedance from junction to mounting base as a function of pulse duration
0
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Z
th(j-mb)
(K/W)
50
10
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
100
10
Conditions
see
vertical in still air
−5
150
Single Pulse
Figure 5
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T
mb
03aa16
(°C)
10
200
−4
Rev. 03 — 3 March 2010
10
−3
Fig 4.
I
(A)
AS
10
10
10
−1
2
1
10
as a function of pulse duration
Non-repetitive avalanche ruggedness current
10
−3
−2
N-channel TrenchMOS standard level FET
P
T
10
j
prior to avalanche = 150 °C
−2
10
t
p
−1
T
t
p
Min
-
-
(s)
003aaa056
10
δ =
PHP30NQ15T
−1
t
T
t
p
1
Typ
-
60
1
© NXP B.V. 2010. All rights reserved.
t
p
003aaa054
25 °C
(ms)
Max
1
-
10
Unit
K/W
K/W
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