PHT4NQ10T NXP Semiconductors, PHT4NQ10T Datasheet
PHT4NQ10T
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PHT4NQ10T Summary of contents
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... TrenchMOS™ standard level FET Rev. 02 — 2 May 2002 M3D087 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features TrenchMOS™ technology Very fast switching Surface mount package. 3. Applications Primary side switch converters High speed line driver Fast general purpose switch ...
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... Figure pulsed unclamped inductive load 3 0.2 ms starting Figure 4 Rev. 02 — 2 May 2002 PHT4NQ10T Typ Max Unit - 100 150 C 200 250 m - 575 m Min Max Unit - 100 ...
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... V DS (V) Unclamped inductive load starting T GS Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration. Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET 03aa25 0 150 50 100 ------------------ - 100% I ...
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... Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 09581 Product data Conditions mounted on a metal clad substrate; Figure 5 minimum footprint Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET Min Typ Max - - 18 - 150 - ...
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... 3 Figure 3 /dt = 100 Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET Typ Max Unit 130 - 250 100 ...
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... --------------------------- - R Fig 9. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET 03aa92 V DS > DSon 150 ( DSon ...
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... MHz DSon GS Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET 03aa35 min typ max ( 03aa95 C iss ...
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... C 0 0 Fig 15. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET 03aa96 3 (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
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... Product data (9397 750 09581) Modifications: • Additional I 01 20000731 - Product specification; initial version. 9397 750 09581 Product data data added. DSS Rev. 02 — 2 May 2002 PHT4NQ10T TrenchMOS™ standard level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
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... Rev. 02 — 2 May 2002 Rev. 02 — 2 May 2002 PHT4NQ10T PHT4NQ10T TrenchMOS™ standard level FET TrenchMOS™ standard level FET performance. Philips Semiconductors ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 2 May 2002 Document order number: 9397 750 09581 PHT4NQ10T TrenchMOS™ standard level FET ...