PHT6N06T NXP Semiconductors, PHT6N06T Datasheet
PHT6N06T
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PHT6N06T Summary of contents
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... TrenchMOS™ standard level FET Rev. 02 — 03 February 2003 M3D087 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT6N06T in SOT223. 1.2 Features Low on-state resistance Fast switching 1.3 Applications converters 1.4 Quick reference data V ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET Min Max Unit - 5 3 8.3 W ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET 03aa25 50 100 150 200 ------------------- 100 003aaa313 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 10633 Product data Conditions Figure 4 minimum footprint; mounted on a printed-circuit board Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET Min Typ Max Unit - - 15 K/W - ...
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... Figure /dt = 100 Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET Min Typ Max Unit 1 0.05 ...
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... 1.8 1.2 0 ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET 003aaa319 150 ( DSon 03aa28 0 60 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET 03aa35 min typ max ( 003aaa318 C iss C oss C rss 10 2 © ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET 003aaa331 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 02 — 03 February 2003 PHT6N06T TrenchMOS™ standard level FET detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Revision history Rev Date CPCN Description 02 20030203 200209006 Product data (9397 750 10633); supersedes product specification PHT6N06T Rev 1.000 of September 1997 Modifications: • The format of this specification has been redesigned to comply with Philips Semiconductors new presentation and information standard • ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 02 — 03 February 2003 Rev. 02 — 03 February 2003 PHT6N06T PHT6N06T TrenchMOS™ standard level FET TrenchMOS™ standard level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 03 February 2003 Document order number: 9397 750 10633 PHT6N06T TrenchMOS™ standard level FET ...