PMF370XN NXP Semiconductors, PMF370XN Datasheet
PMF370XN
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PMF370XN Summary of contents
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... PMF370XN N-channel TrenchMOS extremely low level FET Rev. 03 — 20 June 2008 1. Product profile 1.1 General description Extremely low level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... V; see Figure °C; t ≤ 10 μs; pulsed; see T Figure °C; see T Figure ° °C; t ≤ 10 μs; pulsed Rev. 03 — 20 June 2008 PMF370XN Graphic symbol mbb076 Version SOT323 Min Max - -12 12 and 3 - 0.87 - ...
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... T (° der Fig 2. Normalized total power dissipation as a function of solder point temperature = 4.5V GS Rev. 03 — 20 June 2008 PMF370XN 03aa17 50 100 150 200 T (° tot = × 100 % P tot ( 25°C ) 03an15 = 10 μ 100 μ ...
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... 150 ° ° - ° Rev. 03 — 20 June 2008 PMF370XN Min Typ Max - - 220 03an27 δ (s) p Min Typ Max ...
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... Figure 14 03ao00 2 1.5 2 0.5 1 25°C and 150°C;V j Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 03 — 20 June 2008 PMF370XN Min Typ Max - 550 650 - 629 748 - 370 440 - ...
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... Fig 8. Subthreshold drain current as a function of gate-source voltage 03ao01 1 3.5 1.2 4.5 0.6 0 −60 2 2 Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 03 — 20 June 2008 PMF370XN 03an65 min typ max 0.4 0.8 1.2 1 03al00 0 60 120 180 T (° DSon DSon ( 25° ...
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... I S (A) 0.8 C iss 0.6 C oss 0.4 C rss 0 ( Fig 14. Source current as a function of source-drain voltage; typical values Rev. 03 — 20 June 2008 PMF370XN 03ao05 ° 0.2 0.4 0.6 Q (nC A;V = 15V DS 03ao03 150 ° ° ...
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... scale 2.2 1.35 2.2 0.45 1.3 0.65 1.8 1.15 2.0 0.15 REFERENCES JEDEC JEITA SC-70 Rev. 03 — 20 June 2008 PMF370XN detail 0.23 0.2 0.2 0.13 EUROPEAN ISSUE DATE PROJECTION 04-11-04 06-03-16 © NXP B.V. 2008. All rights reserved. SOT323 ...
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... Fig 16. SOT323 (SC-70) PMF370XN_3 Product data sheet N-channel TrenchMOS extremely low level FET 2.65 1.85 1.325 2 3 1.3 0.5 1 (3×) Rev. 03 — 20 June 2008 PMF370XN solder lands solder resist solder paste occupied area Dimensions in mm sot323_fr © NXP B.V. 2008. All rights reserved ...
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... PMF370XN-01 20040211 PMF370XN_3 Product data sheet N-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Product data sheet - Product data sheet - Rev. 03 — 20 June 2008 PMF370XN Supersedes PMF370XN_2 PMF370XN-01 - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 20 June 2008 PMF370XN © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PMF370XN_3 All rights reserved. Date of release: 20 June 2008 ...