PMG370XN NXP Semiconductors, PMG370XN Datasheet
PMG370XN
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PMG370XN Summary of contents
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... Pinning - SOT363 (SC-88), simplified outline and symbol Pin Description 1 drain (d) 2 drain (d) 3 gate (g) 4 source (s) 5 drain (d) 6 drain (d) PMG370XN N-channel TrenchMOS™ extremely low level FET Rev. 01 — 13 February 2004 Surface mounted package Low on-state resistance Driver circuits 0.69 W tot Simplified outline 6 5 ...
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... 4 100 4 pulsed Figure pulsed Rev. 01 — 13 February 2004 PMG370XN Min - = Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... N-channel TrenchMOS™ extremely low level FET 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current 4 Rev. 01 — 13 February 2004 PMG370XN 100 150 I D ------------------- = 100 function of solder point temperature ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 12822 Product data N-channel TrenchMOS™ extremely low level FET Conditions Figure Rev. 01 — 13 February 2004 PMG370XN Min Typ Max Unit - - 180 K/W 03ap83 t p ...
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... 4 Figure MHz Figure 4 0 Figure Rev. 01 — 13 February 2004 PMG370XN Min Typ Max Unit 0.5 1 1 100 - 10 100 ...
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... 1 (V) Fig 6. Transfer characteristics: drain current as a 03ao01 3 V 3.5 V 4.5 V 1 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 13 February 2004 PMG370XN 2 > DSon ( 150 C 1 and 150 C; V ...
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... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 13 February 2004 PMG370XN min typ max 0 0.4 0.8 1 gate-source voltage. 03ao04 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...
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... Product data N-channel TrenchMOS™ extremely low level FET 03ao03 0.6 0 (V) Fig 13. Gate-source voltage as a function of gate Rev. 01 — 13 February 2004 PMG370XN ( ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-88 Rev. 01 — 13 February 2004 PMG370XN detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT363 ISSUE DATE ...
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... Revision history Table 6: Revision history Rev Date CPCN Description 01 20040213 - Product data (9397 750 12822). 9397 750 12822 Product data N-channel TrenchMOS™ extremely low level FET Rev. 01 — 13 February 2004 PMG370XN © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 13 February 2004 Rev. 01 — 13 February 2004 PMG370XN PMG370XN Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 13 February 2004 Document order number: 9397 750 12822 PMG370XN N-channel TrenchMOS™ extremely low level FET ...