PMGD780SN NXP Semiconductors, PMGD780SN Datasheet
PMGD780SN
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PMGD780SN Summary of contents
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... PMGD780SN Dual N-channel μTrenchMOS standard level FET Rev. 02 — 19 April 2010 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits Surface-mounted package Standard level threshold voltage Low on-state resistance 1 ...
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... °C; pulsed °C; T Figure ° °C; pulsed All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Min - = 20 kΩ [1] Figure 2 and 3 - [1] Figure 2 - ≤ 10 μs; [1] Figure − ...
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... PMGD780SN_2 Product data sheet 03aa17 150 200 T (°C) sp Fig 2. Limit R DSon = All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Dual N-channel μTrenchMOS standard level FET 120 I der (%) 100 I D × ...
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... Transient thermal impedance from junction to solder point as a function of pulse duration PMGD780SN_2 Product data sheet Dual N-channel μTrenchMOS standard level FET Conditions Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Min Typ Max Unit - - 300 K/W 03an28 ...
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... MHz Ω 0 Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Min Typ − 0.6 − − and 8 - 780 - 1445 1700 mΩ ...
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... V (V) DS Fig 6. 03an89 4 4 0.6 0 (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Dual N-channel μTrenchMOS standard level FET (A) 0.8 0.6 0.4 = 150 ° 0 °C and 150 °C; V > I ...
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... T (°C) j Fig 10. Sub-threshold drain current as a function (pF All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN - min typ -6 0 0 ° gate-source voltage 03an92 C iss C oss ...
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... Product data sheet Dual N-channel μTrenchMOS standard level FET 03an91 ° 0.9 1 Fig 13. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN ° ...
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... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Dual N-channel μTrenchMOS standard level FET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION ...
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... Dual N-channel μTrenchMOS standard level FET 2.65 2.35 1.5 0.6 0.5 (4×) (4×) 0.5 (4×) 0.6 (4×) 1.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN 0.4 (2×) 0.6 (2×) Dimensions in mm solder lands solder resist solder paste occupied area sot363_fr © NXP B.V. 2010. All rights reserved ...
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... Data sheet status Product data sheet “Characteristics”: added V maximum value at condition T GS(th) information”: updated Product data All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN Change notice Supersedes - PMGD780SN_1 = 25 ° © NXP B.V. 2010. All rights reserved ...
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... It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2010 PMGD780SN © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2010 Document identifier: PMGD780SN_2 ...