PMR280UN NXP Semiconductors, PMR280UN Datasheet - Page 8
PMR280UN
Manufacturer Part Number
PMR280UN
Description
N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.PMR280UN.pdf
(13 pages)
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NXP Semiconductors
PMR280UN
Product data sheet
Fig 13. Gate-source voltage as a function of gate charge; typical values
V
(V)
GS
5
4
3
2
1
0
0
All information provided in this document is subject to legal disclaimers.
I
T
V
D
j
DS
= 25 °C
= 1 A
= 10 V
0.2
Rev. 2 — 3 February 2012
0.4
0.6
0.8
N-channel TrenchMOS ultra low level FET
Q
G
03an07
(nC)
1
PMR280UN
© NXP B.V. 2012. All rights reserved.
8 of 13
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