PMR290UNE NXP Semiconductors, PMR290UNE Datasheet - Page 4

• Manufacturer Part Number: PMR290UNE
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMR290UNE
Product data sheet
Fig 3.
(A)
I
10
10
D
10
–1
–2
1
10
voltage
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
–1
= single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
Limit R
DSon
= V
DS
All information provided in this document is subject to legal disclaimers.
/I
D
1
Rev. 1 — 13 September 2011
2
20 V, 700 mA N-channel Trench MOSFET
10
(1)
(2)
(3)
(4)
(5)
V
PMR290UNE
DS
(V)
© NXP B.V. 2011. All rights reserved.
017aaa350
100
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