PMV40UN NXP Semiconductors, PMV40UN Datasheet
PMV40UN
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PMV40UN Summary of contents
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... TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV40UN in SOT23. 1.2 Features Ultra low level threshold 1.3 Applications Battery management 1.4 Quick reference data V DS ...
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... 100 4.5 V; Figure pulsed Figure Figure pulsed Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET Version SOT23 Min Max Unit - ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature 4.5 V Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET 03aa25 50 100 150 200 ------------------- 100 03an54 100 s ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 11668 Product data TrenchMOS™ ultra low level FET Conditions Figure Rev. 01 — 05 August 2003 PMV40UN Min Typ Max Unit - - 65 K/W 03an53 ...
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... 4 Figure MHz Figure 4 1. Figure Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET Min Typ Max Unit 0.45 0 0.25 0 ...
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... V 0 ---------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET 03an57 150 ( DSon 03al00 0 60 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (V) Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET 03aj64 min typ 0 0.2 0.4 0 03an59 C iss C oss C rss 10 2 © ...
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... Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET 03an60 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 01 — 05 August 2003 PMV40UN TrenchMOS™ ultra low level FET detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030805 - Product data (9397 750 11668). 9397 750 11668 Product data TrenchMOS™ ultra low level FET Rev. 01 — 05 August 2003 PMV40UN © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 05 August 2003 Rev. 01 — 05 August 2003 PMV40UN PMV40UN TrenchMOS™ ultra low level FET TrenchMOS™ ultra low level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 05 August 2003 Document order number: 9397 750 11668 PMV40UN TrenchMOS™ ultra low level FET ...