PMZ390UN NXP Semiconductors, PMZ390UN Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PMZ390UN

Manufacturer Part Number
PMZ390UN
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PMZ390UN
Manufacturer:
NXP
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PMZ390UNEYL
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PMZ390UNЈ¬315
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1. Product profile
2. Pinning information
BOTTOM VIEW
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
Table 1.
I
I
I
I
I
I
Pin
1
2
3
PMZ390UN
N-channel TrenchMOS standard level FET
Rev. 01 — 12 July 2007
Profile 55 % lower than SOT23
Low on-state resistance
Leadless package
Driver circuits
V
R
DS
DSon
Description
gate (G)
source (S)
drain (D)
30 V
Pinning
460 m
Simplified outline
SOT883 (SC-101)
1
2
Transparent
top view
I
I
I
I
I
I
3
Footprint 90 % smaller than SOT23
Fast switching
Standard level compatible threshold
Load switching in portable appliances
I
P
D
tot
1.78 A
2.50 W
Product data sheet
mbb076
G
Symbol
D
S

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PMZ390UN Summary of contents

Page 1

... PMZ390UN N-channel TrenchMOS standard level FET Rev. 01 — 12 July 2007 BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. 1.2 Features I Profi lower than SOT23 I Low on-state resistance I Leadless package 1.3 Applications ...

Page 2

... C; pulsed see see Figure pulsed all pins human body model 100 pF 1.5 k machine model 200 pF Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET Min - - - Figure 2 and 3 - Figure 2 - Figure © ...

Page 3

... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMZ390UN_1 Product data sheet 03aa17 150 200 Fig 2. Normalized continuous drain current as a Limit DSon Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET 120 I der (%) 100 ------------------- - 100 % der I ...

Page 4

... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PMZ390UN_1 Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure Rev. 01 — 12 July 2007 PMZ390UN Min Typ Max Unit - - 50 K/W [1] - 670 - K/W 003aab831 ...

Page 5

... 4 see Figure 11 and MHz see Figure 0 see Figure Rev. 01 — 12 July 2007 PMZ390UN Min Typ Max and 10 0.45 0.7 0. 100 - 10 100 and ...

Page 6

... V (V) DS Fig 6. Drain-source on-state resistance as a function 03an96 T = 150 (V) GS > DSon Fig 8. Normalized drain-source on-state resistance Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET (V) = 1.8 GS DSon ( ) 0.8 0.6 0.4 0 0 drain current; typical values 1 ...

Page 7

... PMZ390UN_1 Product data sheet 03aj65 (A) 120 180 Fig 10. Sub-threshold drain current as a function of 03an99 0.6 0 (nC) G Fig 12. Gate charge waveform definitions Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET - min typ - 0.4 0 ...

Page 8

... Product data sheet 03an97 C (pF 0 Fig 14. Input, output and reverse transfer capacitances Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET MHz function of drain-source voltage; typical values 03an98 ...

Page 9

... Product data sheet 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 © NXP B.V. 2007. All rights reserved ...

Page 10

... Dimensions in mm Fig 16. Reflow soldering footprint for SOT883 PMZ390UN_1 Product data sheet 1.30 0. 0.05 (12 ) 0.60 0.70 0.80 0.30 0. 0.40 0. 0.50 MBL873 0. Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET solder lands solder resist occupied area solder paste © NXP B.V. 2007. All rights reserved ...

Page 11

... NXP Semiconductors 9. Revision history Table 6. Revision history Document ID Release date PMZ390UN _1 20070712 PMZ390UN_1 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Rev. 01 — 12 July 2007 PMZ390UN Supersedes - © NXP B.V. 2007. All rights reserved. ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 12 July 2007 PMZ390UN N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMZ390UN All rights reserved. Date of release: 12 July 2007 Document identifier: PMZ390UN_1 ...

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