PSMN009-100P NXP Semiconductors, PSMN009-100P Datasheet
PSMN009-100P
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PSMN009-100P Summary of contents
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... PSMN009-100P N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 — 27 December 2011 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... N-channel TrenchMOS SiliconMAX standard level FET Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Graphic symbol mbb076 3 Version SOT78 © NXP B.V. 2011. All rights reserved. ...
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... °C; unclamped j(init) 03ah99 120 P der (%) 120 150 180 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Min - = 20 kΩ -20 Figure 1 - Figure °C; see Figure -55 -55 ≤ 150 °C; δ ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN009-100P Product data sheet N-channel TrenchMOS SiliconMAX standard level FET = DSon All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P 03ai01 =10 μ 100 μ 100 ...
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... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 vertical in free air −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Min Typ Max - - 0. 03af48 t p δ ...
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... Ω °C; I G(ext ° see Figure 13 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Min Typ Max = -55 ° °C 100 - - 4.4 - ...
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... GS 0.6 0 (V) DS Fig 6. 03aa35 V typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P 80 V > DSon 175 ° Transfer characteristics: drain current as a function of gate-source voltage; typical values ...
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... Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P 0 60 120 T − © NXP B.V. 2011. All rights reserved. ...
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... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 175 ° ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P 03ai06 1.5 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...
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... Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Supersedes PSMN009-100P v.3 PSMN009-100P v.2 © NXP B.V. 2011. All rights reserved ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 27 December 2011 PSMN009-100P Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 27 December 2011 Document identifier: PSMN009-100P ...