SI2304DS NXP Semiconductors, SI2304DS Datasheet
SI2304DS
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SI2304DS Summary of contents
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... N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: SI2304DS in SOT23. 2. Features TrenchMOS™ technology Very fast switching Subminiature surface mount package. 3. Applications Battery management High speed switch Low power converter ...
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... 100 Figure 2 and pulsed Figure pulsed Rev. 01 — 17 August 2001 SI2304DS Min Typ Max Unit 30 V 1.7 A 0.83 W 150 C 117 m 190 m Min Max Unit ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 01 — 17 August 2001 SI2304DS 03aa25 120 I der (%) 100 100 150 200 ...
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... Z th(j-sp) (K/ 0.02 0.05 0.1 10 0.2 Single pulse 0 pulse duration. Rev. 01 — 17 August 2001 SI2304DS Value Unit Figure 4 100 K/W 003aaa121 (s) © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... MHz; Figure 0. Figure /dt = 100 Rev. 01 — 17 August 2001 SI2304DS Min Typ Max Unit 1 0.5 V 2.7 V 0.01 0 100 nA 8 117 ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 003aaa124 3.5 5.0 8.0 10 (A) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 17 August 2001 SI2304DS 003aaa123 > DSon ( 150 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 17 August 2001 SI2304DS 10 -1 03aa35 min typ max ( ...
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... Product data N-channel enhancement mode field-effect transistor 003aaa127 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 17 August 2001 SI2304DS 003aaa128 10 ( (nC © ...
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... scale 3.0 1.4 2.5 0.45 1.9 0.95 2.8 1.2 2.1 0.15 REFERENCES JEDEC EIAJ TO-236AB Rev. 01 — 17 August 2001 SI2304DS detail 0.55 0.2 0.1 0.45 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT23 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010817 - Product data; initial version 9397 750 08526 Product data N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 SI2304DS © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 17 August 2001 Rev. 01 — 17 August 2001 SI2304DS SI2304DS Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 17 August 2001 Document order number: 9397 750 08526 N-channel enhancement mode field-effect transistor SI2304DS ...