BLF369 NXP Semiconductors, BLF369 Datasheet - Page 3

• Manufacturer Part Number: BLF369
• Description: General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
BLF369_4
Product data sheet
Fig 1.
Z
(K/W)
th(j-h)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0.4
0.3
0.2
0.1
0
10
Transient thermal impedance from junction to heatsink as function of pulse duration
7
= 1 %
= 2 %
= 5 %
= 10 %
= 20 %
= 50 %
= 100 % (DC)
(7)
(6)
(5)
(4)
10
6
(3)
(2)
(1)
Table 5.
[1]
[2]
[3]
[4]
Symbol
R
R
Z
th(j-h)
th(j-case)
th(j-h)
T
R
R
See
j
th(j-case)
th(j-h)
is the junction temperature.
Figure
10
is dependent on the applied thermal compound and clamping/mounting of the device.
Thermal characteristics
5
and R
1.
Parameter
thermal resistance from
junction to case
thermal resistance from
junction to heatsink
transient thermal impedance
from junction to heatsink
th(j-h)
10
are measured under RF conditions.
Rev. 04 — 19 February 2009
4
10
3
10
Conditions
T
T
T
j
j
j
2
= 200 C
= 200 C
= 200 C
Multi-use VHF power LDMOS transistor
t
t
t
t
t
p
p
p
p
p
= 100 s; = 10 %
= 1 ms; = 10 %
= 2 ms; = 10 %
= 3 ms; = 10 %
= 1 ms; = 20 %
10
1
1
[1][2]
[1][2][3]
[4]
[4]
[4]
[4]
[4]
© NXP B.V. 2009. All rights reserved.
t
p
001aah494
BLF369
(s)
Typ
0.26
0.35
0.063 K/W
0.117 K/W
0.133 K/W
0.142 K/W
0.140 K/W
10
3 of 17
Unit
K/W
K/W