BLF369 NXP Semiconductors, BLF369 Datasheet - Page 7

• Manufacturer Part Number: BLF369
• Description: General purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF369_4
Product data sheet
Fig 8.
(dB)
G
p
21
19
17
15
0
f = 225 MHz; V
Pulsed power gain as function of load power;
typical values
= 10 %.
7.4 Maximum heatsink temperature
200
DS
The heatsink temperature is defined 1 mm below the surface of the heatsink at the center
of the flange.
The maximum allowable heatsink temperature is given in the following graphs at several
pulsed conditions as well as for CW.
= 32 V; I
400
Dq
= 2
600
1 A; t
P
001aah500
L
(W)
p
= 100 s;
Rev. 04 — 19 February 2009
800
Fig 9.
(%)
D
70
50
30
10
0
f = 225 MHz; V
Pulsed drain efficiency as function of
load power; typical values
= 10 %.
Multi-use VHF power LDMOS transistor
200
DS
= 32 V; I
400
Dq
= 2
600
1 A; t
© NXP B.V. 2009. All rights reserved.
P
001aah501
BLF369
L
(W)
p
= 100 s;
800
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