LET16060C STMicroelectronics, LET16060C Datasheet

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LET16060C

Manufacturer Part Number
LET16060C
Description
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
Manufacturer
STMicroelectronics
Datasheet

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Part Number:
LET16060C
Manufacturer:
ST
Quantity:
20 000
Features
Description
The LET16060C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz. The LET16060C is designed for high
gain and broadband performance operating in
common source mode at 28 V. It is ideal for
INMARSAT satellite communications.
Table 1.
November 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Excellent thermal stability
Common source configuration
P
1600 MHz
BeO free package
In compliance with the 2002/95/EC European
directive
OUT
(@ 28 V)= 60 W with 13.8 dB gain @
Order code
LET16060C
Device summary
of N-channel enhancement-mode lateral MOSFETs
RF power transistor from the LdmoST family
Doc ID 022249 Rev 2
Package
M243
Figure 1.
1. Drain
2. Gate
Pin out
epoxy sealed
M243
2
1
LET16060C
LET16060C
Branding
3
3. Source
Preliminary data
www.st.com
1/8
8

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LET16060C Summary of contents

Page 1

... The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode ideal for INMARSAT satellite communications. ...

Page 2

... Power dissipation (@ T DISS T Max. operating junction temperature J T Storage temperature STG Table 3. Thermal data Symbol R Junction-case thermal resistance th(JC) 2 °C) CASE Parameter = 70 °C) C Parameter Doc ID 022249 Rev 2 LET16060C Value Unit 80 V -0 100 W 200 °C -65 to +150 °C Value Unit 1.3 °C/W ...

Page 3

... LET16060C 2 Electrical characteristics °C C Table 4. Static Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS Table 5. ...

Page 4

... Typical performances 3 Typical performances Figure 2. Gain and efficiency vs output power Figure 4. Ouptut power vs drain supply voltage 4/8 Figure 3. Gain vs ouptut power and bias current Doc ID 022249 Rev 2 LET16060C ...

Page 5

... LET16060C 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 022249 Rev 2 Package mechanical data ® ...

Page 6

... Package mechanical data Table 8. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim Figure 5. M243 package dimensions 6/8 mm Min. Typ Max. 5.21 5.72 5.46 6.48 5.59 6.1 14.27 20.07 20.57 8.89 9.4 0.1 0.15 3.18 4.45 1.83 2.24 1.27 1.78 Doc ID 022249 Rev 2 LET16060C inch Min. Typ Max. 0.205 0.225 0.215 0.255 0.22 0.24 0.562 0.79 0.81 0.35 0.37 0.004 0.006 0.125 0.175 0.072 0.088 0.05 0.07 ...

Page 7

... LET16060C 5 Revision history Table 9. Document revision history Date 20-Sep-2011 15-Nov-2011 Revision 1 Initial release. Modified Table 4: V GS(Q) Modified Table 5 and 2 Inserted: Table 7 Inserted: Figure 2, 3 Doc ID 022249 Rev 2 Revision history Changes and V DS(ON) 6 and 4 7/8 ...

Page 8

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 8/8 Please Read Carefully: © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 022249 Rev 2 LET16060C ...

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