LET20030C STMicroelectronics, LET20030C Datasheet

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LET20030C

Manufacturer Part Number
LET20030C
Description
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
Manufacturer
STMicroelectronics
Datasheet
Features
Description
The LET20030C is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to 2
GHz. The LET20030C is designed for high gain
and broadband performance operating in
common source mode at 36 V. It is ideal for base
station applications requiring high linearity.
Table 1.
July 2011
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Excellent thermal stability
Common source configuration
P
2000 MHz
P
2000 MHz
BeO free package
In compliance with the 2002/95/EC European
directive
OUT
OUT
(@28 V) = 45 W with 13.9 dB gain @
(@36 V) = 53 W with 13.3 dB gain @
Order code
LET20030C
Device summary
of N-channel enhancement-mode lateral MOSFETs
RF power transistor from the LdmoST family
Doc ID 019038 Rev 1
Package
M243
Figure 1.
1. Drain
2. Gate
Pin out
epoxy sealed
M243
2
1
LET20030C
LET20030C
Branding
3
3. Source
Preliminary data
www.st.com
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LET20030C Summary of contents

Page 1

... The LET20030C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode ideal for base station applications requiring high linearity. ...

Page 2

... Power dissipation (@ T DISS T Max. operating junction temperature J T Storage temperature STG Table 3. Thermal data Symbol R Junction-case thermal resistance th(JC) 2 °C) CASE Parameter = 70 °C) C Parameter Doc ID 019038 Rev 1 LET20030C Value Unit 80 V -0 108 W 200 °C -65 to +150 °C Value Unit 1.2 °C/W ...

Page 3

... LET20030C 2 Electrical characteristics °C C Table 4. Static Symbol (BR)DSS DSS GSS GS( DS(ON ISS OSS RSS GS Table 5. ...

Page 4

... Impedance data 3 Impedance data Figure 2. Impedance data Table 6. Impedance data Frequency 1800 1900 2000 4/9 D Typical input G Zin S Z (Ω) IN TBD TBD TBD Doc ID 019038 Rev 1 LET20030C Z DL Typical drain load Z (Ω) DL TBD TBD TBD ...

Page 5

... LET20030C 4 Typical performances Figure 3. Gain vs output power and bias current 18 Idq = 200mA Idq = 400mA Freq = 2000 MHz VDD = 28V Output power (W) Figure 5. Gain vs output power and supply voltage Freq = 2000 MHz 11 IDQ = 400mA ...

Page 6

... FWD -20 VDD = 28V -30 IDQ = 400mA -40 -50 -60 -70 -80 -90 0.1 10 100 AM10086v1 Doc ID 019038 Rev 1 LET20030C IMD vs output power @ V DD IMD3 IMD5 IMD7 10 Output Power (WPEP) power @ V = 32V 2000 MHz IS95 modula on 9 channel FWD 750 KHz VDD = 32V IDQ = 400mA 1.98 MHz Effi ...

Page 7

... LET20030C 5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Table 7. M243 (.230 x .360 2L N/HERM W/FLG) mechanical data Dim ...

Page 8

... Revision history 6 Revision history Table 8. Document revision history Date 11-Jul-2011 8/9 Revision 1 Initial release. Doc ID 019038 Rev 1 LET20030C Changes ...

Page 9

... LET20030C Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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