AP2301GN-HF Advanced Power Electronics Corp., AP2301GN-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
low on-resistance and cost-effectiveness

AP2301GN-HF

Manufacturer Part Number
AP2301GN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2301GN-HF

Vds
-20V
Vgs
±12V
Rds(on) / Max(m?) Vgs@4.5v
130
Rds(on) / Max(m?) Vgs@2.5v
190
Qg (nc)
5
Qgs (nc)
1
Qgd (nc)
2
Id(a)
-2.6
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2301GN-HF
Manufacturer:
AP
Quantity:
20 000
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
▼ RoHS Compliant
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-a
Description
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
SOT-23
D
G
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
1.38
0.01
- 20
+12
-2.6
-2.1
-10
DS(ON)
DSS
AP2301GN-HF
Value
90
D
S
130mΩ
200902046
- 2.6A
-20V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP2301GN-HF Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2301GN-HF Halogen-Free Product BV -20V DSS R 130mΩ DS(ON 2. Rating Units - ...

Page 2

... AP2301GN-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 -2. -5V GS ℃ 1.6 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1 0.5 0.0 -50 1.1 1.3 Fig 6. Gate Threshold Voltage v.s. AP2301GN- - =150 - - - Drain-to-Source Voltage ( 100 Junction Temperature ( ...

Page 4

... AP2301GN- - -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 1 0.1 T =25 °C A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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