AP2625GY Advanced Power Electronics Corp., AP2625GY Datasheet - Page 4

• Manufacturer Part Number: AP2625GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2625GY

• Vds: -30V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 185
• Rds(on) / Max(m?) Vgs@2.5v: 265
• Qg (nc): 4
• Qgs (nc): 0.5
• Qgd (nc): 2
• Id(a): -2
• Pd(w): 1.2
• Configuration: Dual P
• Package: SOT-26

AP2625GY
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
V
V
Single Pulse
T
GS
DS
A
-V
=25
DS
Q
o
2
t
C
, Drain-to-Source Voltage (V)
G
d(on)
V
I
, Total Gate Charge (nC)
DS
1
D
=-2A
=-24V
t
r
4
10
t
d(off)
6
t
f
100us
100ms
10ms
1ms
DC
1s
100
8
Fig 10. Effective Transient Thermal Impedance
1000
0.001
0.01
100
0.1
10
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.01
0.02
0.05
Duty factor=0.5
0.001
G
5
0.2
0.1
Single Pulse
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
0.1
Q
13
Q
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
10
21
= 180℃/W
t
j
= P
f=1.0MHz
T
DM
x R
100
thja
25
+ T
C
C
C
a
Q
iss
oss
rss
1000
29
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