AP4428GM Advanced Power Electronics Corp., AP4428GM Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP4428GM

Manufacturer Part Number
AP4428GM
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4428GM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
6
Rds(on) / Max(m?) Vgs@4.5v
10
Qg (nc)
34
Qgs (nc)
7.1
Qgd (nc)
20
Id(a)
16
Pd(w)
2.5
Configuration
Single N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4428GM
Manufacturer:
APEC
Quantity:
25 000
Part Number:
AP4428GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Low On-resistance
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
Parameter
Parameter
1
3
3
D
SO-8
D
D
D
3
S
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G
Max.
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
0.02
G
±20
2.5
30
16
14
80
DS(ON)
DSS
Value
50
AP4428GM
D
S
201002071-1/4
6mΩ
Units
W/℃
℃/W
30V
16A
Unit
W
V
V
A
A
A

Related parts for AP4428GM

AP4428GM Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP4428GM RoHS-compliant Product BV 30V DSS R 6mΩ DS(ON) I 16A Rating Units 30 ± 2.5 0.02 W/℃ ...

Page 2

... AP4428GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V =3. Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 Fig 4. Normalized On-Resistance 16.0 12 8.0 4.0 0 1.2 1.4 Fig 6. On-Resistance vs. AP4428GM 10V 150 C 7.0V A 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 125 Junction Temperature ( C) j v.s. Junction Temperature V =4. ...

Page 4

... AP4428GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4428GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. DETAIL A Part Number Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW: ...

Related keywords