AP4428GM Advanced Power Electronics Corp., AP4428GM Datasheet - Page 3

• Manufacturer Part Number: AP4428GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4428GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 6
• Rds(on) / Max(m?) Vgs@4.5v: 10
• Qg (nc): 34
• Qgs (nc): 7.1
• Qgd (nc): 20
• Id(a): 16
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

80
60
40
20
0
40
20
20
16
12
0
8
4
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
SD
Reverse Diode
V
V
DS
T
, Source-to-Drain Voltage (V)
GS
4
j
0.4
, Drain-to-Source Voltage (V)
=150
, Gate-to-Source Voltage (V)
2
T
A
o
C
= 25
0.6
o
6
C
T
0.8
I
D
A
= 10 A
=25
T
4
j
℃
=25
1
8
o
V
C
G
1.2
=3.0V
7.0V
5.0V
4.5V
10V
1.4
10
6
16.0
12.0
80
60
40
20
8.0
4.0
0.0
1.9
1.4
0.9
0.4
0
0
25
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. On-Resistance vs.
I
V
D
G
= 16 A
=10V
10
v.s. Junction Temperature
Drain Current
2
V
50
V
DS
T
V
GS
j
GS
, Drain-to-Source Voltage (V)
20
, Junction Temperature (
=4.5V
I
=10V
T
D
A
, Drain Current (A)
4
= 150
75
30
o
C
40
6
100
AP4428GM
50
o
125
C)
8
V
G
60
=3.0V
7.0V
5.0V
4.5V
10V
150
10
70
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