AP4432GM Advanced Power Electronics Corp., AP4432GM Datasheet

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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4432GM Pb Free Plating Product BV 30V DSS R 15mΩ DS(ON) I 10A Rating Units 30 ±20 10 6.5 40 2.5 0.02 W/℃ ...

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... AP4432GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 -50 1 1.2 T Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4432GM 10V 150 C A 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

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... AP4432GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area = ...