AP4880GEM Advanced Power Electronics Corp., AP4880GEM Datasheet

Page 1

... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 Parameter Parameter 3 AP4880GEM Pb Free Plating Product BV 25V DSS R 8.5mΩ DS(ON) I 14A Rating Units 25 ± 2.5 0.02 W/℃ ...

Page 2

... AP4880GEM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.0 0 Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 16.0 12.0 8.0 4.0 0 1.2 Fig 6. On-Resistance vs. Drain Current AP4880GEM o 10V T = 150 C A 7.0V 5. Drain-to-Source Voltage ( 100 125 150 o , Junction Temperature ( =4. =10V ...

Page 4

... AP4880GEM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area 80 V =5V DS ...