AP4800AGM Advanced Power Electronics Corp., AP4800AGM Datasheet
AP4800AGM
Specifications of AP4800AGM
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AP4800AGM Summary of contents
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... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4800AGM RoHS-compliant Product BV 30V DSS R 18mΩ DS(ON Rating Units 30 +25 9.6 7.7 40 2.5 W 0.02 W/℃ ...
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... AP4800AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 1 =10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 o =25 C 1.0 0.8 0.6 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4800AGM 10V 150 C A 7.0 V 5 Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
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... AP4800AGM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...