AP4800AGM Advanced Power Electronics Corp., AP4800AGM Datasheet - Page 2

• Manufacturer Part Number: AP4800AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4800AGM

• Vds: 30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 28
• Qg (nc): 11.4
• Qgs (nc): 2
• Qgd (nc): 6.4
• Id(a): 9.6
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
R
V
t
Q
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP4800AGM
Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
g
gs
gd
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
2
j
=25
j
=70
o
C(unless otherwise specified)
2
o
C)
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
G
D
=2.1A, V
=9A,
=9A
=1A
=15Ω
=3.3Ω,V
=V
=10V, I
=30V, V
=24V, V
=15V
=15V
=25V
=0V, I
=10V, I
=4.5V, I
=4V, I
=+25V, V
=4.5V
=0V
GS
V
Test Conditions
Test Conditions
, I
GS
D
D
GS
D
=250uA
=4A
D
D
=0
D
=250uA
GS
GS
GS
=9A
=9A
=0V
=7A
DS
V
=10V
=0V
=0V
=0V
,
Min.
Min.
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
17.5
11.4
Typ.
710
155
145
6.4
1.9
13
21
22
24
14
2
7
7
7
-
-
-
-
-
-
-
Max. Units
+100
1350
Max. Units
1.2
18
28
40
25
18
3
1
3
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
mΩ
uA
uA
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
Ω
V
2