AP4800AGM Advanced Power Electronics Corp., AP4800AGM Datasheet - Page 3

• Manufacturer Part Number: AP4800AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4800AGM

• Vds: 30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 18
• Rds(on) / Max(m?) Vgs@4.5v: 28
• Qg (nc): 11.4
• Qgs (nc): 2
• Qgd (nc): 6.4
• Id(a): 9.6
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

40
30
20
10
18
16
14
12
10
10
0
8
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
V
0.2
V
SD
Reverse Diode
DS
V
T
, Source-to-Drain Voltage (V)
1
4
GS
j
, Drain-to-Source Voltage (V)
=150
T
, Gate-to-Source Voltage (V)
0.4
A
=25
o
C
o
C
0.6
2
6
T
I
A
D
=25
= 7 A
0.8
℃
T
3
8
j
V
=25
G
1
= 3.0 V
o
7.0 V
5.0 V
4.5 V
C
10V
1.2
4
10
1.4
1.2
1.0
0.8
0.6
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
= 9 A
=10V
v.s. Junction Temperature
Junction Temperature
V
T
T
DS
1
0
j
0
j
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
T
A
= 150
50
2
50
o
C
AP4800AGM
100
100
3
o
V
o
C)
C)
G
= 3.0 V
7.0 V
5.0 V
4.5 V
10V
150
150
4
3