AP2321GN-HF Advanced Power Electronics Corp., AP2321GN-HF Datasheet - Page 4

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2321GN-HF

Manufacturer Part Number
AP2321GN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2321GN-HF

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
75
Rds(on) / Max(m?) Vgs@4.5v
120
Qg (nc)
6
Qgs (nc)
1.5
Qgd (nc)
3
Id(a)
-3.1
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2321GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
AP2321GN-HF
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this area
I
V
limited by R
D
Single Pulse
V
90%
10%
DS
V
T
= -3A
DS
GS
A
= -20V
=25
DS(ON)
-V
DS
o
Q
0.1
4
C
t
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
8
1
t
d(off)
12
10
t
f
100ms
100us
10ms
1ms
DC
1s
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
800
600
400
200
0.1
0
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
0.02
V
DUTY=0.5
Single Pulse
0.01
0.05
0.2
G
0.001
0.1
5
Q
-V
GS
0.01
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
Charge
G
GD
1
17
65mΩ
P
DM
Duty factor = t/T
Peak T
Rthja = 270℃/W
10
21
j
= P
t
DM
T
x R
f=1.0MHz
thja
100
+ T
25
a
Q
C
C
C
iss
oss
rss
1000
29
4

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