AP9569GM Advanced Power Electronics Corp., AP9569GM Datasheet - Page 3

• Manufacturer Part Number: AP9569GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP9569GM

• Vds: -40V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 90
• Rds(on) / Max(m?) Vgs@4.5v: 130
• Qg (nc): 8
• Qgs (nc): 1.6
• Qgd (nc): 4
• Id(a): -4.2
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

260
210
160
110
20
15
10
60
5
0
4
3
2
1
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
-V
0.2
-V
Reverse Diode
DS
-V
GS
4
2
T
, Drain-to-Source Voltage (V)
SD
, Gate-to-Source Voltage (V)
j
=150
, Source-to-Drain Voltage (V)
0.4
o
C
0.6
6
4
T
A
=25
0.8
o
T
C
I
A
6
8
D
T
=25
V
=-2A
j
G
=25
1
=-3.0V
o
-7.0V
-5.0V
-4.5V
C
-10V
o
C
1.2
10
8
1.8
1.4
1.0
0.6
20
15
10
1.6
1.2
0.8
0.4
5
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
v.s. Junction Temperature
Junction Temperature
-V
G
D
j
= -10V
=-4A
, Junction Temperature (
DS
2
0
0
T
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
T
50
50
4
A
=150
o
AP9569GM
C
o
C)
100
100
6
V
o
C)
G
=-3.0V
-7.0V
-5.0V
-4.5V
-10V
150
150
8
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