AP10P10GJ-HF Advanced Power Electronics Corp., AP10P10GJ-HF Datasheet

AP10P10GJ-HF

Manufacturer Part Number
AP10P10GJ-HF
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP10P10GJ-HF

Vds
-100V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
500
Rds(on) / Max(m?) Vgs@4.5v
600
Qg (nc)
6
Qgs (nc)
1.5
Qgd (nc)
3.2
Id(a)
-4.6
Pd(w)
20.8
Configuration
Single P
Package
TO-251
▼ Simple Drive Requirement
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
V
V
I
I
I
P
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters. The through-hole version (AP10P10GJ) is available for
low-profile applications.
D
D
DM
STG
J
DS
GS
D
D
@T
@T
@T
@T
C
C
Symbol
Symbol
C
A
=25℃
=100℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
GS
GS
@ 10V
@ 10V
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Halogen-Free Product
3
-55 to 150
-55 to 150
AP10P10GH/J-HF
Rating
BV
R
I
D
-100
32.5
+30
-5.7
-3.6
-15
DS(ON)
2
DSS
Value
3.85
62.5
110
G
G
D
D
S
S
TO-252(H)
TO-251(J)
500mΩ
201110202
-100V
-5.7A
Units
Units
℃/W
℃/W
℃/W
W
W
V
V
A
A
A
1

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AP10P10GJ-HF Summary of contents

Page 1

... The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP10P10GJ) is available for low-profile applications. Absolute Maximum Ratings Symbol ...

Page 2

AP10P10GH/J-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source ...

Page 3

Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 460 ℃ T =25 C ...

Page 4

AP10P10GH/J- - -80V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 Operation in this area limited by R ...

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