AP10N60W Advanced Power Electronics Corp., AP10N60W Datasheet
AP10N60W
Specifications of AP10N60W
Related parts for AP10N60W
AP10N60W Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET G Parameter @ 10V GS @ 10V Parameter AP10N60W RoHS-compliant Product BV 600V D DSS R 0.75Ω DS(ON) I 10A TO- Rating Units 600 ± ...
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... AP10N60W Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... D V =10V G 2.4 2 1.6 1.2 0 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP10N60W 10V 6.0V 5. Drain-to-Source Voltage (V) 75 100 125 150 Junction Temperature ( 100 150 Junction Temperature ( ...
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... AP10N60W = =480V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform 10000 ...
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... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E φ Part Marking Information & Packing : TO-3P 10N60W YWWSSS A SYMBOLS 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package LOGO Date Code (YWWSSS) Millimeters MIN NOM ...