FDMS86300DC Fairchild Semiconductor, FDMS86300DC Datasheet - Page 4

• Manufacturer Part Number: FDMS86300DC
• Manufacturer: Fairchild Semiconductor

©2012 Fairchild Semiconductor Corporation
FDMS86300DC Rev. C1
Typical Characteristics
150
120
150
120
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
0
Figure 1.
0
-75
Figure 5. Transfer Characteristics
0
3
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
I
V
-50
D
GS
vs Junction Temperature
= 5 V
= 24 A
V
V
= 10 V
DS
V
GS
T
V
GS
1
V
, DRAIN TO SOURCE VOLTAGE (V)
-25
J
On-Region Characteristics
GS
,
GS
= 8 V
= 7 V
JUNCTION TEMPERATURE (
4
, GATE TO SOURCE VOLTAGE (V)
= 10 V
0
T
2
J
25
= 150
μ
s
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
5
50
T
o
C
J
3
= 25 °C unless otherwise noted
75
T
J
o
= -55
6
100 125 150
C )
V
V
T
4
GS
J
GS
V
= 25
GS
o
C
= 5.5 V
= 6.5 V
= 6 V
μ
o
s
C
5
7
4
0.001
0.01
200
100
0.1
15
12
10
6
5
4
3
2
1
0
Figure 2.
Figure 4.
9
6
3
0
1
0.0
Forward Voltage vs Source Current
0
5
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
V
= 0 V
GS
SD
0.2
T
J
, BODY DIODE FORWARD VOLTAGE (V)
30
= 5.5 V
Normalized On-Resistance
V
6
= 150
On-Resistance vs Gate to
GS
I
I
Source Voltage
D
D
Source to Drain Diode
,
,
= 24 A
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
0.4
C
V
GS
60
7
V
= 6 V
T
T
GS
J
J
0.6
= 25
= 125
= 8 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
C
90
o
8
C
0.8
T
J
T
= -55
J
= 25
120
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V
V
9
o
1.0
GS
C
V
GS
o
C
GS
= 6.5 V
= 10 V
= 7 V
μ
μ
s
s
1.2
150
10