FDMS3006SDC Fairchild Semiconductor, FDMS3006SDC Datasheet - Page 2

• Manufacturer Part Number: FDMS3006SDC
• Manufacturer: Fairchild Semiconductor

©2011 Fairchild Semiconductor Corporation
FDMS3006SDC Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
ΔV
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
ΔT
ΔT
g
g
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
GS
= 30 A, di/dt = 300 A/μs
= 10 mA, referenced to 25 °C
= 1 mA, V
= 10 mA, referenced to 25 °C
= 15 V, V
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 24 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 20 V, V
2
DS
Test Conditions
, I
D
S
S
D
GS
D
D
D
= 2 A
= 30 A
D
= 30 A
GS
GEN
GS
DS
= 1 mA
= 30 A,
= 30 A
= 30 A, T
= 26 A
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 30 A
J
= 15 V,
= 125 °C
(Note 2)
(Note 2)
Min
1.2
30
4305
1630
102
167
0.4
0.8
0.8
Typ
1.7
1.3
1.9
1.8
5.9
3.5
5.3
38
58
16
39
57
26
12
-5
16
5725
2170
Max
155
0.8
1.2
500
100
3.0
1.9
2.7
2.7
61
93
29
12
62
10
80
36
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
nA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
V
S
V