IFS100S12N3T4_B11 Infineon Technologies, IFS100S12N3T4_B11 Datasheet
IFS100S12N3T4_B11
Specifications of IFS100S12N3T4_B11
Related parts for IFS100S12N3T4_B11
IFS100S12N3T4_B11 Summary of contents
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... Digitale Schnittstelle 5V-CMOS, galvanische Trennung nach IEC61800-5-1 digital interface 5V-CMOS, galvanic isolation according to IEC61800-5-1 Normen IEC61800-5-1 (Overvoltage Category III, Polution Degree 2, standards Insulating Material Groupe II), UL94, RoHs Blockschaltbild block diagram Foto photo prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 1(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... A 200 A 455 W +/-20 V min. typ. max. 1,75 2,10 V 2,05 V 2,10 V 5,2 5,8 6,4 V 0,80 µC 7,5 6,30 nF 0,27 nF 1,0 mA 100 nA 0,157 µs 0,17 µs 0,175 µs 0,036 µs 0,044 µs 0,047 µs 0,330 µs 0,418 µs 0,444 µs 0,113 µs 0,190 µs 0,222 µs 6,49 mJ 10,2 mJ 11,89 mJ 6,35 mJ 9,55 mJ 10,61 mJ 360 A 0,33 K/W 0,086 K/W DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... R thCH = 1 W/(m*K) grease < 200° vjop R thJC 3(13) Zieldaten Target Data 1200 V 100 A 200 A 1550 A²s 1500 A²s 273 W min. typ. max. 1,70 2,15 V 1,65 V 1,65 V 121 A 132 A 140 A 8,5 µC 15,9 µC 18,0 µC 4,8 mJ 6,9 mJ 7,7 mJ 0,55 K/W 0,15 K/W min. typ. max. 1,485 1,50 1,515 m < 30 ppm/K 200 °C 8,7 K/W DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... CC´+EE´ max stg M G 4(13) min. typ. max. 5, 20,0 mW 3375 K 3411 K 3433 K min. typ. max. 2 7,5 mm > 200 min. typ. max. 0,011 K 1,2 m 175 °C -40 150 °C -40 125 °C -40 125 °C 3,00 - 6,00 Nm 316 g DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... THD = [-133,3A; +133,3A], f 1kHz 5(13) Zieldaten Target Data min. typ. max. 30,0 kHz 1420 V 2500 V 50 kV/µs 6000 V 6000 -213,3 - +213,3 A -133,3 - +133 49,6 50,0 50 100 0,0 % -1, 0,4 % PDM 1) % 0,09 - 0,135 PDM 1) % 0,116 - 0,15 PDM 10 12 bit DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... SDS SDH t CLK t CLKRT t CLKFT t SDRT t SDFT t CLKpulses 6(13) Zieldaten Target Data min. typ. max. 4,75 5,00 5,25 V 4,5 5,0 5 4,3 4,4 V 3,9 4,1 V 0,1 0,2 V 4,0 4,3 V 3,5 3,7 V 0,2 0,3 V min. typ. max. 0,12 0,26 V 4,48 4,8 V -22 mA 14,5 mA 1,16 ns 1,16 ns 0,17 0,26 V 3,98 4,3 V -22 mA 14,5 mA 1,16 ns 1,16 ns 9,3 10,0 10,5 MHz 1,3 4,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 0,5 1,5 2,5 ns 250 ns DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data typisch typisch 0,16 0,16 0,14 0,14 0,12 0,12 0,1 0,1 0,08 0,08 deltaPDM [%] deltaPDM [%] 0,06 0,06 0,04 0,04 0,02 0, 4,5 4,5 4,75 4, [V] [V] CC1 CC1 7(13) 5,25 5,25 5,5 5,5 DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... SNR [dB] SNR [dB 71,5 71 70,5 70,5 -60 -40 -20 -60 -40 - 100 120 140 160 100 120 140 160 typisch typisch fCLK [MHz -60 -40 - 100 120 140 160 8(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... Zieldaten Target Data 2,5 2 3,5 3 4,5 4 [V] [ [A] C Eon, Tvj = 125°C Eoff, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 150° DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... V V [V] [ Tvj = 25°C Tvj = 25°C Tvj = 125°C Tvj = 125°C Tvj = 150°C Tvj = 150° 2 100 120 140 160 180 200 10(13) 800 800 1000 1000 1200 1200 1400 1400 [A] DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 11(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... Technische Information / technical information IGBT-Module IFS100S12N3T4_B11 IGBT-Modules Schaltplan / circuit diagram Gehäuseabmessungen / package outline Infineon Infineon prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 12(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...
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... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. prepared by: US date of publication: 16.08.2011 approved by: MH revision: 2.1 Zieldaten Target Data 13(13) DB_IFS100S12N3T4_B11_2V1_2011-08-16 ...