IFS100S12N3T4_B11 Infineon Technologies, IFS100S12N3T4_B11 Datasheet - Page 10

• Manufacturer Part Number: IFS100S12N3T4_B11
• Manufacturer: Infineon Technologies

Specifications of IFS100S12N3T4_B11

• Packages: AG-MIPAQ-2
• Ic (max): 100.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 3

IGBT-Module
IGBT-Modules
prepared by: US
approved by: MH
Technische Information / technical information
200
200
180
180
160
160
140
140
120
100
8
6
4
2
0
80
60
40
20
Durchlasskennlinie der Diode-Wechselr. (typisch)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode inverter (typical)
forward characteristic of diode inverter (typical)
I
I
-0,1
F
F
0
0
= f(V
= f(V
F
F
)
)
2
0,4
4
Tvj = 25° C
Tvj = 25° C
Tvj = 125° C
Tvj = 125° C
Tvj = 150° C
Tvj = 150° C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,9
6
V
R
F
G
[V]
8
[ ]
1,4
10
date of publication: 16.08.2011
revision: 2.1
IFS100S12N3T4_B11
12
1,9
14
2,4
16
10(13)
250
250
200
200
150
150
100
100
50
50
0
0
12
12
8
8
4
0
0
0
0
200
200
20
40
400
400
Ic, Modul
Ic, Modul
IC, Chip
IC, Chip
Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 125°C
Tvj = 150°C
Tvj = 150°C
60
600
600
80 100 120 140 160 180 200
V
V
CE
CE
Zieldaten
Target Data
I
F
[V]
[V]
[A]
800
800
1000
1000
1200
1200
DB_IFS100S12N3T4_B11_2V1_2011-08-16
1400
1400