IFS100S12N3T4_B11 Infineon Technologies, IFS100S12N3T4_B11 Datasheet - Page 2

• Manufacturer Part Number: IFS100S12N3T4_B11
• Manufacturer: Infineon Technologies

Specifications of IFS100S12N3T4_B11

• Packages: AG-MIPAQ-2
• Ic (max): 100.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 3

IGBT-Module
IGBT-modules
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Charakteristische Werte / characteristic values
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
prepared by: US
approved by: MH
Technische Information / technical information
IGBT-Wechselrichter / IGBT-inverter
T
t
T
I
I
I
I
V
T
f = 1 MHz,T
f = 1 MHz, T
V
V
I
V
R
I
V
R
I
V
R
I
V
R
I
V
R
I
V
R
V
V
pro IGBT / per IGBT
pro IGBT / per IGBT
date of publication: 16.08.2011
revision: 2.1
IFS100S12N3T4_B11
T
P
C
C
C
C
C
C
C
C
C
C
Paste
C
C
GE
vj
CE
CE
GE
GE
GE
GE
GE
GE
GE
CEmax
Gon
Gon
Goff
Goff
Goff
Goff
vj
= 1 ms
= 100 A, V
= 100 A, V
= 100 A, V
= 4,00 mA, V
= 100 A, V
= 100 A, V
= 100 A, V
= 100 A, V
= 100 A, V
= 100 A, V
= 95°C,
= 25°C,
= 25°C
= 25°C
= -15 V ... +15 V
= 1200 V, V
= 0 V, V
= ±15 V
= ±15 V
= ±15 V
= ±15 V
= ±15 V, di
= ±15 V, du
= 1,6
= 1,6
= 1,6
= 1,6
= 1,6
= 1,6
= 1 W/(m*K) /
15 V, V
=V
CES
vj
vj
GE
-L
= 25 °C,V
GE
GE
GE
CE
CE
CE
CE
CE
CE
CC
= 25 °C,V
sCE
= 20 V, T
C
CE
T
T
GE
CE
= 600 V
= 600 V
= 600 V
= 600 V
= 600 V
/dt = 2,4 kA/µs (Tvj =150°C)
= 600 V
= 15 V,
= 15 V,
= 15 V,
= 800 V
vj
vj
/dt = 3,3 kV/µs (Tvj =150°C) T
= V
·di/dt,
= 0 V, T
= 175°C
= 175°C
GE
CE
, T
CE
vj
grease
= 25 V, V
= 25°C
vj
= 25 V, V
vj
2(13)
= 25°C
= 25 °C
= 1 W/(m*K)
t
P
10 µs,
GE
GE
= 0 V
= 0 V
T
vj
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= 25°C
= 125°C
= 150°C
150°C
=150°C
=150°C
=150°C
=150°C
=150°C
vj
=150°C
= 25°C
=125°C
= 25°C
=125°C
= 25°C
=125°C
= 25°C
=125°C
= 25°C
= 25°C
=125°C
=125°C
V
V
I
R
V
V
R
I
I
t
t
R
C,nom
I
E
E
C
C
P
CE sat
GE(th)
Q
Zieldaten / target data
CRM
CES
GES
d,on
d,off
I
t
t
thCH
CES
GES
SC
thJC
Gint
ies
res
tot
r
f
on
off
G
min.
5,2
1200
+/-20
0,157
0,175
0,036
0,044
0,047
0,330
0,418
0,444
0,113
0,190
0,222
11,89
10,61
0,086
typ.
1,75
2,05
2,10
0,80
6,30
0,27
0,17
6,49
10,2
6,35
9,55
0,33
100
200
455
360
5,8
7,5
max.
2,10
100
6,4
1,0
DB_IFS100S12N3T4_B11_2V1_2011-08-16
K/W
K/W
mA
µC
nA
mJ
mJ
mJ
mJ
mJ
mJ
W
nF
nF
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
A
A
V
V
V
V
V
A