IFS100S12N3T4_B11 Infineon Technologies, IFS100S12N3T4_B11 Datasheet - Page 9

• Manufacturer Part Number: IFS100S12N3T4_B11
• Manufacturer: Infineon Technologies

Specifications of IFS100S12N3T4_B11

• Packages: AG-MIPAQ-2
• Ic (max): 100.0 A
• Vce(sat) (typ): 1.75 V
• Configuration: sixpack
• Technology: IGBT4
• Housing: EconoPACK™ 3

IGBT-Module
IGBT-Modules
prepared by: US
approved by: MH
Technische Information / technical information
200
200
180
180
160
160
140
140
120
120
100
100
200
200
180
180
160
140
120
100
20
18
16
14
12
10
Ausgangskennlinie IGBT-Wechselr. (typisch)
Ausgangskennlinie IGBT-Wechselr. (typisch)
output characteristic IGBT inverter (typical)
output characteristic IGBT inverter (typical)
I
I
V
V
80
80
60
60
40
40
20
20
80
60
40
20
8
6
4
2
0
C
C
0
0
0
GE
GE
= f(V
= f(V
0
0
0
5
= 15V
= 15V
CE
CE
20
)
)
0,5
0,5
6
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Tvj = 25° C
Tvj = 25° C
Tvj = 125° C
Tvj = 125° C
Tvj = 150° C
Tvj = 150° C
Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
7
60
1
1
80 100 120 140 160 180 200
8
1,5
1,5
V
V
I
V
CE
CE
C
GE
[A]
[V]
[V]
9
[V]
2
2
10
date of publication: 16.08.2011
revision: 2.1
IFS100S12N3T4_B11
2,5
2,5
11
3
3
12
3,5
3,5
13
9(13)
200
200
180
180
160
160
140
140
120
120
100
100
36
36
32
32
28
24
20
16
12
20
18
16
14
12
10
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)
output characteristic IGBT inverter (typical)
output characteristic IGBT inverter (typical)
I
I
T
T
80
80
60
60
40
40
20
20
C
C
8
4
0
8
6
4
2
0
vj
vj
0
0
= f(V
= f(V
= 150 C
= 150 C
0
0
0
0
CE
CE
20
0,5
0,5
)
)
2
40
1
1
VGE = 19V
VGE = 19V
VGE = 17V
VGE = 17V
VGE = 15V
VGE = 15V
VGE = 13V
VGE = 13V
VGE = 11V
VGE = 11V
VGE = 9V
VGE = 9V
Tvj = 25°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
4
60
1,5
1,5
6
80 100 120 140 160 180 200
2
2
Zieldaten
Target Data
V
V
R
I
C
CE
CE
G
2,5
2,5
8
[A]
[ ]
[V]
[V]
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3
3
10
3,5
3,5
12
4
4
DB_IFS100S12N3T4_B11_2V1_2011-08-16
14
4,5
4,5
16
5
5