BTS 112-A SMD Infineon Technologies, BTS 112-A SMD Datasheet

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BTS 112-A SMD

Manufacturer Part Number
BTS 112-A SMD
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 112-A SMD

Packages
P-TO220-3
Channels
1.0
Vds (max)
60.0 V
Id(nom)
2.5 A
Rds (on) (max)
150.0 mOhm
Id(lim) (min)
-
Type
BTS 112A
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage,
Gate-source voltage
Continuous drain current,
ISO drain current
T
Pulsed drain current,
Short circuit current,
Short circuit dissipation,
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Features
C
= 85 C,
N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electricalIy shorted to the tab
V
GS
= 10 V,
V
60 V
DS
R
GS
V
= 20 k
DS
T
T
T
T
C
j
j
C
= 0.5 V
= – 55 ... + 150 C
= – 55 ... + 150 C
= 25 C
= 33 C
I
12 A
D
R
0.15
DS(on)
1
Symbol
V
V
V
I
I
I
I
P
P
T
R
R
D
D-ISO
D puls
SC
j
DS
DGR
GS
SCmax
tot
th JC
th JA
,
T
stg
Package
TO-220AB
60
60
12
2.5
48
27
400
40
– 55 ... + 150
E
55/150/56
Pin
Values
20
3.1
75
TEMPFET
1
G
Ordering Code
C67078-S5014-A3
®
2
D
Unit
V
A
W
K/W
BTS 112 A
C
3
S
1
19.02.04
2
3

Related parts for BTS 112-A SMD

BTS 112-A SMD Summary of contents

Page 1

... DGR D-ISO I D puls SCmax P tot stg – – ® TEMPFET BTS 112 A 1 Pin Ordering Code C67078-S5014-A3 Values Unit 2 400 W 40 – 55 ... + 150 C E – 55/150/56 K/W 3 ...

Page 2

... I DSS I GSS R DS(on iss C oss C rss d(on d(off ® TEMPFET BTS 112 A Values min. typ. max. 60 – – 2.5 3.0 3.5 – 0.1 1.0 – 10 100 – 10 100 – – 0.12 0.15 3.0 5.7 – – 360 480 – 160 250 – ...

Page 3

... SD – – – V TS(on) – – I TS(on) – – 0. 150 C 0. TS(on) 150 t off 0.5 3 ® TEMPFET BTS 112 A Values Unit typ. max. – – 1.3 1 – C 0.1 – V 1.4 1.5 – – 10 – 600 0.1 0.5 0.2 0.3 C – – s – ...

Page 4

... Parameter Diagram to determine for SC j Symbol SC(off Max. gate voltage DS Parameter: = – 55 ... +150 C 4 ® TEMPFET BTS 112 A Examples 1 2 – – 6.8 5.0 – – 400 330 – – GS(SC – 55 ... + 150 C j ...

Page 5

... P Max. power dissipation tot Typical output characteristics : t Parameter = Typ. drain-source on-state resistance DS(on) Parameter Safe operating area D DS Parameter: 5 ® TEMPFET BTS 112 0.01 19.02.04 ...

Page 6

... Drain-source on-state resistance DS(on Parameter Typ. transfer characteristic Parameter = TEMPFET V Gate threshold voltage : Parameter = , = Typ. transconductance Parameter ® BTS 112 GS(th 19.02.04 ...

Page 7

... Continuous drain current D V Parameter: – Typ. gate-source leakage current GSS Parameter: = – Forward characteristics of reverse diode Parameter Typ. capacitances Parameter ® TEMPFET BTS 112 MHz GS 19.02.04 ...

Page 8

... Transient thermal impedance : Parameter = / thJC p 8 ® TEMPFET BTS 112 A 19.02.04 ...

Page 9

... TO 220 AB Ordering Code Standard C67078-S5014-A3 9.9 4.4 9.5 3.7 1) 0.75 1.05 2.54 2.54 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 TO 220 AB SMD Version E 3045 Tape & reel E 3045 A 1.3 0.5 2.4 GPT05155 9 ® TEMPFET BTS 112 A Ordering Code C67078-S5014-A4 C67078-S5014-A5 19.02.04 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. TEMPFET 10 ® BTS 112 A 19.02.04 ...

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